band switching diode dan235e ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) high frequency switching ? features 1)ultra small mold type. (emd3) 2)high reliability ? construction silicon epitaxial ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit pd mw v r v tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - - 1.0 v i f =10ma reverse current i r - - 10 na v r =25v ct - - 1.2 pf v r =6v , f=1mhz forward resistance rf - - 0.9 ? i f =2ma , f=100mhz parameter limits power dissipation 150 reverse voltage (dc) 35 junction temperature 125 parameter capacitance between terminals storage temperature ? 55 to ? 125 emd3 1.0 0.7 0.5 0.5 0.7 0.7 0.6 0.6 1.3 rohm : emd3 jeita : sc-75a jedec : sot-416 dot (year week factory) (3) 1.60.2 1.60.2 1.00.1 0.80.1 0.5 0.5 (2) (1) 0.150.05 0.70.1 0.550.1 0.1min 00.1 0.20.1 -0.05 0.30.1 0.05 4.00.1 2.00.05 1.550.1 0 3.50.05 1.750.1 8.00.2 0.50.1 1.80.2 0.30.1 1.80.1 5.50.2 0.90.2 00.1 1.5 ? 0.1 ? 0 1/3 2011.06 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
dan235e 0 20 40 60 80 100 forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) forward current:if(ma) rf dispersion map forward operating resistance:rf() 0.01 0.1 1 10 100 0 0.10.20.30.40.50.60.70.80.9 1 1.1 ta=-25 ta=125 ta=75 ta=25 0.0001 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 35 ta=125 ta=-25 ta=25 ta=75 0.1 1 10 0 5 10 15 20 25 30 f=1mhz 810 820 830 840 850 860 ave:834.0mv ta=25 if=10ma n=30pcs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 ta=25 vr=25v n=30pcs ave:0.0285na 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ave:0.865pf ta=25 vr=6v f=1mhz n=10pcs 0 5 10 15 20 ave:4.60a ave:64.7ns ta=25 if=0.1a ir=0.1a rl=100 irr=0.1*ir n=10pcs 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ave:0.630 ta=25 f=100mhz if=2ma n=10pcs 0.1 1 10 100 11 01 0 0 0.1 1 10 100 0.1 1 10 100 t ifsm 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board 8.3ms ifsm 1cyc 8.3ms ifsm 1cyc 8.3ms 2/3 2011.06 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
dan235e electrostatic ddischarge test esd(kv) esd dispersion map 0 1 2 3 4 5 6 7 8 9 10 ave:1.06kv c=200pf r=0 ave:7.02kv c=100pf r=1.5k 3/3 2011.06 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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